Abstract:
A photosensor is an electronic component that
detects the presence of visible light, infrared radiation, and/ or
ultraviolet radiation. A photosensor which changes its electrical
capacitance in the presence of visible light was developed based
on the photo-dielectric effect of Cadmium Sulphide (CdS). A
thin layer of CdS was deposited on Fluorine-doped Tin Oxide
glass using chemical bath deposition technique. The optimum
photo-dielectric behaviour was observed for chemical bath
temperature between 40-45 ºC. After annealing the deposited
film at 180-200 ºC, they have shown a band gap in the range of
2.30– 2.40 eV. Photo-capacitance and photoconductivity in dark
and visible light illumination showed a significant change,
indicating these films are suitable for photo sensing applications.
